As semiconductor devices move to the nanoscale, random telegraph signals have become an issue of major concern to the semiconductor industry. This book aims to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of random telegraph signals to applied technology.

Following their first observation in 1984, random telegraph signals (RTS) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. As semiconductor devices move to the nanoscale however, RTS have become an issue of major concern to the semiconductor industry, both in the development of current technology, such as memory devices and logic circuits, as well as in future semiconductor devices beyond the silicon roadmap, such as nanowire, TFET and carbon nanotube-based devices.It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single-trap phenomena, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTS to applied technology.

1) Introduction2) RTS phenomenologya. RTS time constantsi. Shockley-Read-Hall frameworkii. Trap energy, capture barrier and location from SRH approachiii. Non SRH behavior: Coulomb blockade effectsiv. Tunneling transitionsb. RTS amplitude behaviorc. RTS in the gate current of a MOS deviced. RTS in the junction leakage current of a MOSFETe. Multiple and complex RTS3) RTS modeling, simulation and parameter extractiona. Time constant modeling and simulationb. Extraction trap position from RTN time constantsc. RTS amplitude modellingd. Atomistic numerical modeling of the RTS amplitudee. Novel measurement and analysis methodsf. Ab initio modeling of RTS in gate dielectrics4) Impact device processing and scaling on RTSa. Processing effects on RTSb. RTS in fin-type architecturesc. Nanometric scaling aspects of RTSi. Scaling trend RTS amplitudeii. Silicon Gate-All-Around Nanowiresiii. High-mobility channel materialsiv. RTS in Tunnel FETsd. RTS in “beyond-silicon” devicesi. Carbon Nanotubes (CNT) FETsii. Other advanced devices5) Operational and Reliability aspects of RTSa. Switching AC operation of RTSb. Impact of uniform and hot-carrier degradationc. BTI and RTS: oxide trapping?d. Statistical RTS measurement methodse. Device and circuit simulation of dynamic variability6) RTS in memory and imager circuitsa. RTS in Flash and SRAM cellsb. RTS in DRAM and logic circuitsc. RTS in novel ReRAM and PC memoriesd. RTS in CMOS Imagers and CCDs

Following their first observation in small area silicon MOSFETs in 1984, random telegraph signals (RTS) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. However, as devices move to the nanometer scale, particularly memory devices and logic circuits, and in the development of alternatives to silicon MOSFETS, RTS have become an issue of major concern to the semiconductor industry. Moreover, following the move to the nanoscale, the devices will become more susceptible to single-trap random telegraph signal effects. It is clear that the successors to planar silicon transistors, including nanowire devices, tunnel field effect transistors, and carbon nanotubes are equally sensitive or even more so than current CMOS devices.It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single-trap phenomema, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTS to applied technology.