Contains a collection of papers from the below symposia held during the 10th Pacific Rim Conference on Ceramic and Glass Technology (PacRim10), June 2-7,2013, in Coronado, California 2012: Advances in Electroceramics Microwave Materials and Their Applications Oxide Materials for Nonvolatile Memory Technology and Applications

Contains a collection of papers from the below symposia heldduring the 10th Pacific Rim Conference on Ceramic and GlassTechnology (PacRim10), June 2-7,2013, in Coronado, California2012:* Advances in Electroceramics* Microwave Materials and Their Applications* Oxide Materials for Nonvolatile Memory Technology andApplications

Preface viiADVANCES IN ELECTROCERAMICSPyroelectric Performances of Relaxor-Based Ferroelectric SingleCrystals and their Applications in Infrared Detectors 3Long Li, Haosu Luo, Xiangyong Zhao, Xiaobing Li, Bo Ren, QingXu, and Wenning DiFormation of Tough Foundation Layer for Electrical Plating onInsulator using Aerosol Deposition Method of Cu-Al203 Mixed Powder17Naoki Seto, Shingo Hirose, Hiroki Tsuda and Jun AkedoFormation and Electromagnetic Properties of 0.1 BTO/0.9NZFOCeramic Composite with High Density Prepared by Three-StepSintering Method 23Bin Xiao, Juncong Wang, Ning Ma, and Piyi DuMICROWAVE MATERIALS AND THEIR APPLICATIONSThin Glass Characterization in the Radio Frequency Range37Alfred Ebberg, Jürgen Meggers, Kai Rathjen, GerhardFotheringham, Ivan Ndip, Florian Ohnimus, Christian Tschoban, IsaPieper, Andreas Kilian, Sebastian Methfessel, Martin Letz, andUlrich FotheringhamFormation of Silver Nano Particles in Percolative Ag-PbTi03Composite Dielectric Thin Film 51Tao Hu, Zongrong Wang, Liwen Tang, Ning Ma, and Piyi DuSoftware for Calculating Permittivity of Resonators: HakCol& ErCalc 65Rick UbicEffects of MgO Additive on Structural, Dielectric Properties andBreakdown Strength of Mg2Ti04 Ceramics Doped with ZnO-B203 Glass17Xiaohong Wang, Mengjie Wang, Zhaoqiang Li, and WenzhongLuDesign of Microwave Dielectrics Based on Crystallography87Hitoshi OhsatoOXIDE MATERIALS FOR NONVOLATILE MEMORY TECHNOLOGY ANDAPPLICATIONSStable Resistive Switching Characteristics of Al203 Layers Insertedin Hf02 Based RRAM Devices 103Chun-Yang Huang, Jheng-Hong Jieng, and Tseung-Yuen TsengImprovement of Resistive Switching Properties of Ti/Zr02/Pt withEmbedded Germanium 111Chun-An Lin, Debashis Panda, and Tseung-Yuen TsengNonvolatile Memories Using Single Electron Tunneling Effects inSi Quantum Dots Inside Tunnel Silicon Oxide 117Ryuji OhbaResistive Switching and Rectification Characteristics withCoO/Zr02 Double Layers 123Tsung-Ling Tsai, Jia-Woei Wu, and Tseng-Yuen TsengResearch Of Nano-Scaled Transition Metal Oxide ResistiveNon-Volatile Memory (R-RAM) 129ChiaHua Ho, Cho-Lun Hsu, Chun-Chi Chen, Ming-Taou Lee, Hsin-HauHuang, Kai-Shin Li, Lu-Mei Lu, Tung-Yen Lai, Wen-Cheng Chiu, Bo-WeiWu, MeiYi Li, Min-Cheng Chen, Cheng-San Wu, Yi-Ping Hsieh, andFu-Liang YangAuthor Index 137