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Autor: Jacob Greenberg
ISBN-13: 9783540412465
Einband: Book
Seiten: 249
Gewicht: 512 g
Format: 246x164x20 mm
Sprache: Englisch

Thermodynamic Basis of Crystal Growth

44, Springer Series in Materials Science
P-T-X Phase Equilibrium and Non-Stoichiometry
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1
This book presents a new and promising technique to grow single crystalline compound semiconductor materials with defined stoichometry. It appeals to researchers, engineers and advanced students.
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1 Thermodynamic Fundamentals.- 2 Experimental Methods of Investigating P-T-X Phase Equilibrium.- 3 Experimental Data on P-T-X Phase Diagrams and Non-stoichiometry.- Conclusion.- References.
3
This book covers the thermodynamic foundations of inorganic materials science and the controlled synthesis of inorganic materials. A new thermodynamic approach to the non-stoichiometry of crystalline solids, known as vapor pressure scanning, has been developed by the author and is described in detail in this book. It is based on the high-precision experimental determination of the boundaries of the single-phase volume of the solid in the pressure-temperature-composition P-T-X phase space. This approach has been tested on a number of inorganic materials and has been shown to have an unparalleled precision (up to 10-4 at.%) in the determination of non-stoichiometry directly at high temperatures (up to 1200 C). Along with the results obtained by the author and his colleagues, the P-T-X diagrams of other important materials (e.g., III-V, IV-VI semiconductors) are also discussed.

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Autor: Jacob Greenberg
ISBN-13 :: 9783540412465
ISBN: 3540412468
Verlag: Springer-Verlag GmbH
Gewicht: 512g
Seiten: 249
Sprache: Englisch
Auflage 2002. 2002.
Sonstiges: Buch, 246x164x20 mm, 126 Abbildungen, 28 Tabellen