This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "e;Silicon"e; Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec- tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non- specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci- fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "e;Silicon"e; Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.

This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "e;Silicon"e; Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec- tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non- specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci- fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "e;Silicon"e; Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.