Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits

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694 g
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241x160x24 mm
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This book is essential to understand new test methodologies, algorithms and industrial practices. Without its insight into the physics of nano-metric technologies, it would be difficult to develop system-level test strategies that yield a high IC fault coverage. The work on defect-oriented testing presented in the book is not final, and it is an evolving field with interesting challenges imposed by the ever-changing nature of nano-metric technologies. The 2nd edition of Defect Oriented Testing has been extensively updated with the addition of chapters on Functional, Parametric Defect Models and Inductive fault Analysis and Yield Engineering to provide a link between defect sources and yield. Test and design practitioners from academia and industry will find that Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits lays the foundations for further pioneering work.
Functional and Parametric Defect Models.- Digital CMOS Fault Modeling.- Defects in Logic Circuits and their Test Implications.- Testing Defects and Parametric Variations in RAMs.- Defect-Oriented Analog Testing.- Yield Engineering.- Conclusion.
Defect-oriented testing methods have come a long way from a mere interesting academic exercise to a hard industrial reality. Many factors have contributed to its industrial acceptance. Traditional approaches of testing modern integrated circuits have been found to be inadequate in terms of quality and economics of test. In a globally competitive semiconductor market place, overall product quality and economics have become very important objectives. In addition, electronic systems are becoming increasingly complex and demand components of the highest possible quality. Testing in general and defect-oriented testing in particular help in realizing these objectives. For contemporary System on Chip (SoC) VLSI circuits, testing is an activity associated with every level of integration. However, special emphasis is placed for wafer-level test, and final test. Wafer-level test consists primarily of dc or slow-speed tests with current/voltage checks per pin under most operating conditions and with test limits properly adjusted. Basic digital tests are applied and in some cases low-frequency tests to ensure analog/RF functionality are exercised as well. Final test consists of checking device functionality by exercising RF tests and by applying a comprehensive suite of digital test methods such as I , delay fault testing, DDQ stuck-at testing, low-voltage testing, etc. This partitioning choice is actually application dependent.

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